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High-performance microthermoelectric coolers, which are composed of pairs of thermoelectric ‘legs’ and convert electricity into cooling, can be fabricated using methods compatible with the modern semiconductor industry. The cover shows a scanning electron microscopy image of the integrated microthermoelectric device, which has a packing density of around 5,000 leg pairs per cm2.
This Review Article examines state-of-the-art metrology methods for integrated circuits and highlights how new integrated circuit device design and industry requirements affect lithography options and consequently metrology requirements.
A hafnium oxide memristor crossbar array integrated with transistors can provide a provable key destruction scheme in which unique physical fingerprints are extracted by comparing the conductance of neighbouring memristors, and can only be revealed if a digital key stored on the same array is erased.
A free-standing top contact design reduces the thermomechanical stress in microthermoelectric coolers, resulting in improved reliability and cooling stability.
A comparison between the use of directed self-assembly and conventional patterning methods in the fabrication of 7 nm node FinFETs shows similar device performance, suggesting directed self-assembly could offer a simplified patterning technique for future semiconductor technology nodes.
The spanning tree protocol is a key component of today’s Ethernet. Radia Perlman, inventor of the underlying algorithm, recounts how it was first developed.