Volume 2 Issue 12, December 2019

A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.

Improvements in magnetic tunnel junctions allows a 2 MB magnetic random-access memory array to be scaled for L4 cache applications.

With the help of extreme-ultraviolet lithography and high-mobility-channel fin field-effect transistors, the Taiwan Semiconductor Manufacturing Company deliver their latest CMOS platform for use in mobile and high-performance computing applications.

Gate dielectrics with an equivalent oxide thickness of only one nanometre can be grown on two-dimensional semiconductors with the help of a monolayer molecular crystal.

Purely electronic memristive devices based on CMOS flash memory technology could lead to large-scale neuromorphic systems.

Using a monolayer molecular crystal as a seeding layer, hafnium oxide dielectrics with an equivalent oxide thickness of only 1 nm can be deposited on graphene, molybdenum disulfide and tungsten diselenide.

The absorption profile of photodetectors based on silicon can be extended into the near- and shortwave-infrared regions by taking advantage of optical resonance effects.

A ferroelectric semiconductor field-effect transistor, which uses the two-dimensional ferroelectric semiconductor α-In₂Se₃ as a channel material, could offer enhanced capabilities compared with conventional ferroelectric field-effect transistors in non-volatile memory applications.

Thin-film transistors with a high electron mobility and operational stability can be fabricated from solution-processed multilayer channels composed of ultrathin layers of indium oxide, zinc oxide nanoparticles, ozone-treated polystyrene and compact zinc oxide.

A floating-gate memristive device fabricated in a commercial 180 nm CMOS process can be integrated into a selector-free memristive array and used to demonstrate basic neuromorphic applications.

Commercial touchscreens can serve as a reader interface for capacitive coupled data transfer using identification tags that are fabricated with thin-film transistor technology and powered by thin-film photovoltaic cells that convert light from the touchscreens.