Volume 3 Issue 11, November 2020

An ultrashort pulse of electric current can be used to switch the magnetization of a micrometre-scale magnetic element via spin–orbit torques.

A cleaning–healing–cleaning method can effectively eliminate ionic defects at the surface of perovskite films, resulting in reliable and high-performance perovskite transistors.

This Perspective examines the concept of near-senor and in-sensor computing in which computation tasks are moved partly to the sensory terminals, exploring the challenges facing the field and providing possible solutions for the hardware implementation of integrated sensing and processing units using advanced manufacturing technologies.

Nanoscale magnetic skyrmions that are generated in metallic multilayers using on-chip heating diffuse from hot to cold regions and can be thermoelectrically detected via the Nernst voltage.

The magnetization of a cobalt thin film can be reversed by spin–orbit torques using picosecond electrical pulses that are generated by photoconductive switches.

A nanoplasmonic technique was used to investigate in operando the switching properties of materials used in redox random access memories, providing insight into the operation and potential breakdown mechanisms of the devices.

A three-stage solution-based cleaning technique can increase the room-temperature mobility and reduce the hysteresis of organometal halide perovskite transistors by decreasing the surface defects in the perovskite films.

Green perovskite light-emitting diodes with external quantum efficiencies of up to 19.1% at high brightness can be created by depositing an ultrathin layer of strongly polar lithium fluoride between the perovskite and hole-transport layers.

Wafer-scale monolayers of MoS₂ can be used to create flexible transistors and circuits that exhibit on/off ratios of 10¹⁰, current densities of ~35 μA μm⁻¹ and mobilities of ~55 cm² V⁻¹ s⁻¹.

Nanoscale electrodes fabricated using adhesion lithography can be combined with solution-processed metal oxide semiconductors to create Schottky diodes with performance suitable for 5G communications and beyond.