Volume 4 Issue 5, May 2021

Unique circumstances in Taiwan led to the creation of the foundry model, where an integrated circuit manufacturer has no products of its own and its plants produce only customer designs. The model has reshaped the global semiconductor industry and is well positioned to be at the heart of technological innovation in the industry.

A superconducting electromechanical device at cryogenic temperatures can be probed using optical fibres and a commercial phase modulator.

Sub-1-nm vertical field-effect transistors can be created by transferring pre-made metal film contacts onto two-dimensional materials.

A commercial titanium-doped lithium niobate phase modulator can be employed at temperatures as low as 800 mK for the electro-optical readout of a superconducting electromechanical circuit at 15 mK.

A three-phase system that is composed of a ferroelectric Na_0.5Bi_0.5TiO₃ matrix in which ferrimagnetic NiFe₂O₄ nanocolumns coated with antiferromagnetic p-type NiO are embedded exhibits self-biased magnetoelectric switching at room temperature.

Molybdenum disulfide vertical transistors with channel lengths down to one atomic layer can be made with metal electrodes using a mechanical van der Waals transfer process that leads to a high-quality metal–semiconductor interface.

Heterophase grain boundaries in memristors based on pentagonal palladium diselenide can guide the formation of conductive filaments during resistive switching, leading to devices with uniform switching properties, low set voltages, long retention times and programmable multilevel resistance states.

Band-engineered van der Waals heterostructures that block dark current without suppressing photocurrent can be used to build detectors with high room-temperature detectivity for visible light and blackbody infrared light.

Disorder in the charge carrier transport of graphene-based field-effect transistors can be used to construct physically unclonable functions that are secure and can withstand advanced computational attacks.