Volume 5 Issue 3, March 2022

Scientist and engineer who helped shape semiconductor technologies.

Indium oxide transistors with an ultrashort channel of less than 10 nm can be fabricated using atomic layer deposition, a technique that is compatible with complementary metal–oxide–semiconductor (CMOS) processes.

Hole spin qubits that operate at temperatures close to 4 K can be created in fin field-effect transistors similar to those used in advanced integrated circuits.

This Perspective examines the limitations of ultra-reliable and low-latency communication (URLLC) used in fifth-generation (5G) communication systems and proposes key research directions for the next generation of URLLC, termed extreme ultra-reliable and low-latency communication.

This Review examines the development of smart textiles for application in personalized healthcare, examining the different platform technologies, fabrication strategies and clinical scenarios, as well as the current commercial and regulatory landscape.

High-frequency elastic waves can propagate across local disorder and around sharp corners in nanoelectromechanical aluminium nitride membranes; this behaviour can be directly imaged using microwave microscopy.

High-performance indium oxide transistors with dimensions smaller than advanced silicon technologies can be fabricated using an industry-compatible atomic layer deposition process.

A metamaterial-based resonant clock network can provide energy-efficient power delivery to large superconducting digital systems.

Fin-shaped transistors can host hole spin qubits at high enough temperatures to potentially enable the scaling and development of quantum computing systems controlled by conventional electronics co-integrated in the same package.

Silicon spin qubits can be fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing.