Electronic devices articles within Nature

Featured

  • Article
    | Open Access

    We develop a method for high-density vertical stacking of active-device multi-layers, implementing memory and logic functions, using unique VIP-FETs where a van der Waals intercalation layer modulates the p- or n-type nature of the FETs.

    • Yimeng Guo
    • , Jiangxu Li
    •  & Zheng Han

  • Article |

    Stretchable radio-frequency electronics based on a dielectro-elastic elastomer is demonstrated to be capable of completely maintaining operating frequencies unaffected by strain and shows superior electrical, mechanical and thermal properties compared with conventional stretchable substrate materials.

    • Sun Hong Kim
    • , Abdul Basir
    •  & Yei Hwan Jung

  • Article
    | Open Access

    A previously undescribed photocatalytic approach enables the effective p-type and n-type doping of organic semiconductors at room temperature using only widely available weak dopants such as oxygen and triethylamine.

    • Wenlong Jin
    • , Chi-Yuan Yang
    •  & Simone Fabiano

  • Article
    | Open Access

    A pioneering design strategy for amorphous p-type semiconductors can be used in high-performance, stable p-channel TFTs and complementary circuits, which may establish viable amorphous p-channel TFT technology and large-area complementary electronics in a low-cost manner.

    • Ao Liu
    • , Yong-Sung Kim
    •  & Yong-Young Noh

  • Article |

    Using a three-pronged approach — spanning field-driven negative capacitance stabilization to increase intrinsic energy storage, antiferroelectric superlattice engineering to increase total energy storage, and conformal three-dimensional deposition to increase areal energy storage density — very high electrostatic energy storage density and power density are reported in HfO2–ZrO2-based thin film microcapacitors integrated into silicon.

    • Suraj S. Cheema
    • , Nirmaan Shanker
    •  & Sayeef Salahuddin

  • Article |

    High-density, intrinsically stretchable transistors with high driving ability and integrated circuits with high operation speed and large-scale integration were enabled by a combination of innovations in materials, fabrication process design, device engineering and circuit design.

    • Donglai Zhong
    • , Can Wu
    •  & Zhenan Bao

  • Article |

    Examining the in-plane spin components of the noncoplanar antiferromagnet manganese ditelluride provides spectroscopic and computational evidence of materials with a new type of plaid-like spin splitting in the antiferromagnetic ground state.

    • Yu-Peng Zhu
    • , Xiaobing Chen
    •  & Chang Liu

  • Article
    | Open Access

    A mechanical design is developed for the fabrication of ultralong, fracture-free and perturbation-free semiconductor fibres to address the increasing demand for flexible and wearable optoelectronics.

    • Zhixun Wang
    • , Zhe Wang
    •  & Lei Wei

  • Article |

    Monolithic three-dimensional integration of two-dimensional field-effect transistors enables improved integration density and multifunctionality to realize ‘More Moore’ and ‘More than Moore’ technologies.

    • Darsith Jayachandran
    • , Rahul Pendurthi
    •  & Saptarshi Das

  • Article |

    A miniaturized narrow-channel in-plane electrochemical capacitor shows drastically reduced ionic resistances within both the electrode material and the electrolyte and an ultrahigh areal capacitance by downscaling the channel width with femtosecond-laser scribing.

    • Yajie Hu
    • , Mingmao Wu
    •  & Liangti Qu

  • Article |

    An injectable hydrogel for use as a scaffold to aid tissue repair is described, the material of which is conductive so that it can be used both for electrophysiological measurement and electrostimulation in closed-loop robot-assisted rehabilitation.

    • Subin Jin
    • , Heewon Choi
    •  & Mikyung Shin

  • Article |

    Proton-coupled electron-transfer reactions are used to achieve efficient chemical doping of organic semiconductor thin films under ambient conditions, and a reference-electrode-free, resistive pH sensor based on the method is proposed.

    • Masaki Ishii
    • , Yu Yamashita
    •  & Jun Takeya

  • Perspective |

    The challenges and opportunities for the design of field-effect transistors are discussed and a vision of future transistors and potential innovation opportunities is provided.

    • Wei Cao
    • , Huiming Bu
    •  & Kaustav Banerjee

  • Article |

    A MicroLED lighting panel, assembled in 60 s by a surface-tension-driven fluidic self-assembly technique, gave a yield as high as 99.90% through the addition of a small amount of poloxamer to the assembly solution.

    • Daewon Lee
    • , Seongkyu Cho
    •  & Sunghoon Kwon

  • Article |

    We report a simple method to fabricate chiroptical flexible layers via supramolecular helical ordering of conjugated polymer chains, providing direct, scalable realization of on-chip detection of the spin degree of freedom of photons.

    • Inho Song
    • , Jaeyong Ahn
    •  & Joon Hak Oh

  • Article |

    A two-dimensional field-effect transistor made of indium selenide is shown to outperform state-of-the-art silicon-based transistors, operating at lower supply voltage and achieving record high transconductance and ballistic ratio.

    • Jianfeng Jiang
    • , Lin Xu
    •  & Lian-Mao Peng

  • Article |

    Perovskite LEDs with exceptional performance at high brightness are demonstrated achieving an operational half-lifetime of 32 hours, an important step towards commercialization opening up new opportunities beyond conventional LED technologies, such as perovskite electrically pumped lasers.

    • Yuqi Sun
    • , Lishuang Ge
    •  & Neil C. Greenham

  • Article
    | Open Access

    A virtual process game to benchmark the performance of humans and computers for the fabrication of semiconductors leads to a strategy combining human expert design with optimization algorithms to improve semiconductor process development.

    • Keren J. Kanarik
    • , Wojciech T. Osowiecki
    •  & Richard A. Gottscho

  • Article |

    A class of dielectric copolymers called ladderphanes is shown to outperform existing dielectric polymers and composites, with high discharged energy density and charge–discharge efficiency even at temperatures up to 200 °C.

    • Jie Chen
    • , Yao Zhou
    •  & Qing Wang

  • Article |

    Through microscopic manipulation of radiofrequency fields, a new class of compact terahertz devices is proposed, setting the stage for next-generation ultrafast semiconductor electronics.

    • Mohammad Samizadeh Nikoo
    •  & Elison Matioli

  • Article |

    A universal interface connects soft, rigid and encapsulation modules together to form robust, stretchable devices in a plug-and-play manner by pressing without using pastes, which will simplify and accelerate development of on-skin and implantable devices.

    • Ying Jiang
    • , Shaobo Ji
    •  & Xiaodong Chen

  • Article |

    The direct observation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick, their deterministic creation, manipulation and annihilation by applied voltage, as well the demonstration of their memristive functionality is reported.

    • Zhongran Liu
    • , Han Wang
    •  & He Tian

  • Article |

    A new exchange-bias effect between two different antiferromagnetic layers enables the fabrication of all-antiferromagnetic structures that have a large room-temperature tunnelling magnetoresistance and potential applications for ultrafast memory technologies.

    • Peixin Qin
    • , Han Yan
    •  & Zhiqi Liu

  • Article
    | Open Access

    Vertical organic electrochemical transistors demonstrating unprecedented performances in both p- and n-type operation modes have been synthesized from new electro-active and ion-permeable semiconducting polymers by the interface engineering of electro-active blend layers.

    • Wei Huang
    • , Jianhua Chen
    •  & Antonio Facchetti

  • Article |

    Spin correlation experiments are demonstrated in an electron entangler device based on the ‘splitting’ of Cooper pairs from a superconductor, which can potentially be used to investigate many fundamental phases and processes related to the electron spin.

    • Arunav Bordoloi
    • , Valentina Zannier
    •  & Andreas Baumgartner

  • Article |

    A reaction is described combining oxidative polymerization and in situ reductive n-doping to yield poly(benzodifurandione), a facilely synthesized stable n-type conducting polymer with ultrahigh conductivity, with applications in organic electronics.

    • Haoran Tang
    • , Yuanying Liang
    •  & Fei Huang

  • Article
    | Open Access

    A compute-in-memory neural-network inference accelerator based on resistive random-access memory simultaneously improves energy efficiency, flexibility and accuracy compared with existing hardware by co-optimizing across all hierarchies of the design.

    • Weier Wan
    • , Rajkumar Kubendran
    •  & Gert Cauwenberghs

  • Article |

    Using a sol–gel passivation method, the fabrication of blue InGaN nanorod-LEDs with the highest external quantum efficiency value ever reported for LEDs in the nanoscale is demonstrated.

    • Mihyang Sheen
    • , Yunhyuk Ko
    •  & Changhee Lee

  • Article |

    Clean van der Waals contacts of high-work-function metals have been demonstrated on few- and single-layered MoS2 and WSe2, leading to p-type characteristics on single-layer MoS2 and purely p-type characteristics on WSe2.

    • Yan Wang
    • , Jong Chan Kim
    •  & Manish Chhowalla

  • Article |

    By intercalating layered 2D atomic crystals with selected chiral molecules, a new class of chiral molecular intercalation superlattices is reported, demonstrating highly ordered structures and achieving high tunnelling magnetoresistance and spin polarization ratios.

    • Qi Qian
    • , Huaying Ren
    •  & Xiangfeng Duan

  • Article
    | Open Access

    An organic bipolar junction transistor composed of highly crystalline rubrene thin films has a device architecture that could be used in organic electronics with greatly improved high-frequency performance

    • Shu-Jen Wang
    • , Michael Sawatzki
    •  & Karl Leo

  • Article |

    Light-field control of real and virtual charge carriers in a gold–graphene–gold heterostructure is demonstrated, and used to create a logic gate for application in lightwave electronics.

    • Tobias Boolakee
    • , Christian Heide
    •  & Peter Hommelhoff

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